PART |
Description |
Maker |
ML74WLAD |
NAND Gate (unbuffered) and AND Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
ML74WLCE |
Inverter (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
SCL4011UB SCL4001UB |
UNBUFFERED QUAD TWO INPUT NAND GATE
|
R & E International, Inc.
|
MC74HCU04A |
Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS
|
ON Semiconductor
|
MC74HCU04A06 MC74HCU04AFEL MC74HCU04AFELG MC74HCU0 |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS
|
ONSEMI[ON Semiconductor]
|
M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|